IRF7342TRPBF International Rectifier, IRF7342TRPBF Datasheet

IRF7342TRPBF

Manufacturer Part Number

IRF7342TRPBF

Description

MOSFET 2P-CH 55V 3.4A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRF7342TRPBF.pdf (7 pages)

2.IRF7342TRPBF.pdf (4 pages)

3.IRF7342TRPBF.pdf (7 pages)

Specifications of IRF7342TRPBF

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

105 mOhm @ 3.4A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

3.4A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

38nC @ 10V

Input Capacitance (ciss) @ Vds

690pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Channel Type

Current, Drain

-3.4 A

Gate Charge, Total

26 nC

Package Type

SO-8

Polarization

Dual P-Channel

Power Dissipation

2 W

Resistance, Drain To Source On

0.170 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

43 ns

Time, Turn-on Delay

14 ns

Transconductance, Forward

3.3 S

Voltage, Breakdown, Drain To Source

-55 V

Voltage, Drain To Source

–55 V

Voltage, Forward, Diode

-1.2 V

Voltage, Gate To Source

±20 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.105Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±20V

Continuous Drain Current

3.4A

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Configuration

Dual

Transistor Polarity

Dual P-Channel

Drain-source Breakdown Voltage

- 55 V

Gate-source Breakdown Voltage

20 V

Mounting Style

SMD/SMT

Gate Charge Qg

26 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7342PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7342TRPBF

Manufacturer:

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRF7342TRPBF

Company:

H&T Electronics

Part Number:

IRF7342TRPBF

Quantity:

651

Company:

H&T Electronics

Part Number:

IRF7342TRPBF

Quantity:

4 000

Company:

H&T Electronics

Part Number:

IRF7342TRPBF

Quantity:

5 000

Company:

H&T Electronics

Part Number:

IRF7342TRPBF

Quantity:

24 000

Current page: 1 of 7
Download datasheet (159Kb)

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

dv/dt

GSM

θJA

@ T

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

STG

= 25°C

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy‚

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Parameter

…

@ 10V

Top View

Typ.

–––

HEXFET

-55 to + 150

IRF7342PbF

Max.

0.016

-3.4

-2.7

± 20

114

-55

-27

2.0

1.3

5.0

SO-8

DS(on)

Power MOSFET

Max.

62.5

DSS

= 0.105Ω

= -55V

PD - 95200

Units

W/°C

°C/W

V/ns

°C

Related parts for IRF7342TRPBF

IRF7342TRPBF Summary of contents

Page 1

... Fast Switching l Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7342PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate ...

Page 3

VGS TOP -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V 10 -3.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° ...

Page 4

IRF7342PbF 2.0 -3 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.45 0. 0.15 0. ...

Page 5

1MHz iss rss 960 oss iss 720 480 C oss 240 C rss ...

Page 6

IRF7342PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ...

Page 7

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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