IRF7509TRPBF International Rectifier, IRF7509TRPBF Datasheet - Page 4
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IRF7509TRPBF
Manufacturer Part Number
IRF7509TRPBF
Description
MOSFET N/P-CH 30V MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7509TRPBF.pdf
(8 pages)
Specifications of IRF7509TRPBF
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A, 2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
210pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
175 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
2.4 A
Power Dissipation
1.25 W
Gate Charge Qg
7.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7509TRPBF
IRF7509TRPBFTR
IRF7509TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7509TRPBF
Manufacturer:
IR
Quantity:
20 000
Fig 7. Typical On-Resistance Vs. Gate
4
Fig 9. Typical Capacitance Vs.
0.140
0.120
0.100
0.080
0.060
400
300
200
100
0
0
1
Drain-to-Source Voltage
C
C
C
V
iss
V
oss
rss
GS
DS
V
C
C
C
4
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
GS
iss
rss
oss
Voltage
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
10
8
ID = 2.7A
gd
gd
f = 1MHz
, C
ds
12
SHORTED
100
16
A
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
Fig 10. Typical Gate Charge Vs.
20
16
12
1
8
4
0
T
T
Single Pulse
0
C
J
I
D
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
= 1.7A
V
Gate-to-Source Voltage
DS
°
2
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
4
BY R
10
DS(on)
V
V
6
DS
DS
= 24V
= 15V
FOR TEST CIRCUIT
SEE FIGURE 9
8
10us
100us
1ms
10ms
www.irf.com
10
100
12
A