IRF7509TRPBF International Rectifier, IRF7509TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7509TRPBF
• Description: MOSFET N/P-CH 30V MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7509TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 175 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 7.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7509TRPBF; IRF7509TRPBFTR

Fig 7. Typical On-Resistance Vs. Gate
4
Fig 9. Typical Capacitance Vs.
0.140
0.120
0.100
0.080
0.060
400
300
200
100
0
0
1
Drain-to-Source Voltage
C
C
C
V
iss
V
oss
rss
GS
DS
V
C
C
C
4
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
GS
iss
rss
oss
Voltage
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
10
8
ID = 2.7A
gd
gd
f = 1MHz
, C
ds
12
SHORTED
100
16
A
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
Fig 10. Typical Gate Charge Vs.
20
16
12
1
8
4
0
T
T
Single Pulse
0
C
J
I
D
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
= 1.7A
V
Gate-to-Source Voltage
DS
°
2
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
4
BY R
10
DS(on)
V
V
6
DS
DS
= 24V
= 15V
FOR TEST CIRCUIT
SEE FIGURE 9
8
10us
100us
1ms
10ms
www.irf.com
10
100
12
A