IRF7509TRPBF International Rectifier, IRF7509TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7509TRPBF
• Description: MOSFET N/P-CH 30V MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7509TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 175 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 7.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7509TRPBF; IRF7509TRPBFTR


‚
Notes:
∆
DSS
d(on)
r
d(off)
GSS
f
rr
S
SM
fs
(BR)DSS
GS(th)
DS(ON)
SD
g
gs
gd
iss
oss
rss
rr
2
N-Channel I
P-Channel I
(BR)DSS
∆
J
SD
SD
≤
≤
≤
≤
J

≤
≤
≤
≤
ƒ
„
Ω
D
D
GS
GS
DD
DD
D
D
J
J
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
J
J
≤
Ω
GS
GS
Ω
D
D
DS
DS
DS
F
F
D
D
D
D
D
DS
S
S
D
D
D
D
GS
GS
D
GS
GS
D
D
„
„
„
„
„
GS
G
GS
www.irf.com
J
J
GS
GS
G
≤
Ω,
Ω
ƒ
„
ƒ
≤
„
„
ƒ
ƒ