IRF7509TRPBF International Rectifier, IRF7509TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7509TRPBF
• Description: MOSFET N/P-CH 30V MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7509TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 175 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 7.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7509TRPBF; IRF7509TRPBFTR

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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 5. Normalized On-Resistance
100
100
0.1
2.0
1.5
1.0
0.5
0.0
0.1
10
10
1
1
0.1
3.0
-60
TOP
BOTTOM 3.0V
I
D
-40
= 1.7A
V
T , Junction Temperature (°C)
V
3.5
-20
J
DS
GS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
Vs. Temperature
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
0
4.0
20
T = 25°C
J
40
T = 150°C
4.5
J
1
60
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
J
DS
80
= 10V
5.0
100 120 140 160
3.0V
V
GS
5.5
= 10V
6.0
10
A
A
A
Fig 6. Typical On-Resistance Vs. Drain
Fig 2. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
0.220
0.180
0.140
0.100
0.060
100
100
0.1
0.1
10
10
1
1
0.1
0.4
0
TOP
BOTTOM 3.0V
T = 150°C
J
V
V
SD
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
DS
Forward Voltage
2
0.8
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
I
D
Current
, Drain Current (A)
T = 25°C
VGS = 4.5V
J
VGS = 10V
4
1.2
1
20µs PULSE WIDTH
T = 150°C
J
6
3.0V
1.6
8
V
GS
= 0V
2.0
10
10
A
A
3