PMGD780SN,115 NXP Semiconductors, PMGD780SN,115 Datasheet - Page 4

• Manufacturer Part Number: PMGD780SN,115
• Description: MOSFET N-CH TRENCH DL 60V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD780SN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 490mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 1.05nC @ 10V
• Input Capacitance (ciss) @ Vds: 23pF @ 30V
• Power - Max: 410mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.92 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.49 A
• Power Dissipation: 410 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2369-2; 934057709115; PMGD780SN T/R

NXP Semiconductors
5. Thermal characteristics
Table 4.
PMGD780SN_2
Product data sheet
Symbol Parameter
R
Fig 4.
th(j-sp)
Z th(j-sp)
(K/W)
10 3
10 2
10
1
10 -4
thermal resistance from junction to solder point
Transient thermal impedance from junction to solder point as a function of pulse duration
δ = 0.5
0.2
0.1
0.05
0.02
Thermal characteristics
single pulse
10 -3
All information provided in this document is subject to legal disclaimers.
10 -2
Rev. 02 — 19 April 2010
Conditions
Figure 4
Dual N-channel μTrenchMOS standard level FET
10 -1
1
PMGD780SN
P
Min
-
t p
t p (s)
T
© NXP B.V. 2010. All rights reserved.
Typ
-
δ =
03an28
t p
T
Max
300
t
10
Unit
K/W
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