PMGD780SN,115 NXP Semiconductors, PMGD780SN,115 Datasheet
PMGD780SN,115
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934057709115
PMGD780SN T/R
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PMGD780SN,115 Summary of contents
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PMGD780SN Dual N-channel μTrenchMOS standard level FET Rev. 02 — 19 April 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features ...
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... NXP Semiconductors 3. Ordering information Table 2. Ordering information Type number Package Name PMGD780SN SC-88 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current ...
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... NXP Semiconductors 120 P der (%) 100 P tot × ---------------------- - 100% der P ° tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ( ° single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMGD780SN_2 Product data sheet ...
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... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp th(j-sp) (K/W) δ 0.2 0.1 0.05 0.02 10 single pulse Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMGD780SN_2 Product data sheet Dual N-channel μ ...
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... NXP Semiconductors 6. Characteristics Table 5. Characteristics ° unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS gate-source threshold voltage V GS(th) I drain leakage current DSS I gate leakage current GSS R drain-source on-state resistance DSon Dynamic characteristics Q total gate charge G(tot) Q gate-source charge ...
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... NXP Semiconductors (A) 1 ° Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 3 V ( DSon (Ω 0.2 0 ° Fig 7. Drain-source on-state resistance as a function of drain current; typical values PMGD780SN_2 Product data sheet 03an88 4.5 4 3 (V) DS Fig 6. ...
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... NXP Semiconductors 2.4 V GS(th) (V) typ 1.8 1.2 min 0.6 0 − 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature MHz GS Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMGD780SN_2 Product data sheet Dual N-channel μTrenchMOS standard level FET ...
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... NXP Semiconductors (A) 0.8 0.6 0.4 150 °C 0 0.3 0 °C and 150 ° Fig 12. Source current as a function of source-drain voltage; typical values PMGD780SN_2 Product data sheet Dual N-channel μTrenchMOS standard level FET 03an91 ° 0.9 1 Fig 13. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 02 — ...
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... NXP Semiconductors 7. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 14. Package outline SOT363 (SC-88) PMGD780SN_2 Product data sheet scale 2.2 1.35 2 ...
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... NXP Semiconductors 8. Soldering Fig 15. Reflow soldering footprint SOT363 (SC-88) PMGD780SN_2 Product data sheet Dual N-channel μTrenchMOS standard level FET 2.65 2.35 1.5 0.6 0.5 (4×) (4×) 0.5 (4×) 0.6 (4×) 1.8 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN 0.4 (2× ...
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... Document ID Release date PMGD780SN_2 20100419 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table 5 • Section 10 “Legal PMGD780SN_1 ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 12. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Legal information ...