UM5K1NTR Rohm Semiconductor, UM5K1NTR Datasheet - Page 3

• Manufacturer Part Number: UM5K1NTR
• Description: MOSFET 2N-CH 30V .1A SOT-353
• Manufacturer: Rohm Semiconductor

Specifications of UM5K1NTR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 13pF @ 5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Umt5: Module Configuration
• Transistor Polarity: Dual N Channel
• Continuous Drain Current Id: 10mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 4V
• Threshold: RoHS Compliant
• Configuration: Dual Common Source
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 150 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Transistors
Switching characteristics measurement circuit
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
Fig.10 Reverse drain current vs.
Fig.7 Static drain-source on-state
5m
2m
1m
0
9
8
7
6
5
4
3
2
1
0
−50
SOURCE-DRAIN VOLTAGE : V
Fig.13 Switching time measurement circuit
V
CHANNEL TEMPERATURE : Tch (˚C)
−25
GS
resistance vs. channel
temperature
source-drain voltage ( II )
=4V
I
0
D
0.5
=100mA
R
25
G
0V
50
V
I
75
1
GS
D
=50mA
100 125
Ta=25˚C
Pulsed
SD
D.U.T.
V
Pulsed
(V)
GS
=4V
I
1.5
D
150
R
V
0.5
50
DD
20
10
L
Fig.11 Typical capacitance vs.
5
2
1
0.1
V
Fig.8 Forward transfer
0.005
0.002
0.001
DS
0.05
0.02
0.01
0.5
0.2
0.1
DRAIN-SOURCE VOLTAGE : V
0.2
0.0001
0.0002 0.0005 0.001 0.002
drain-source voltage
admittance vs. drain current
0.5
Ta=−25˚C
125˚C
DRAIN CURRENT : I
25˚C
75˚C
1
2
0.005 0.01 0.02
5
V
V
10
GS
DS
D
Ta =25˚C
f=1MH
V
DS
0.05
C
C
C
( A)
GS
20
oss
iss
rss
( V)
0.1 0.2
=0V
V
Pulsed
Fig.14 Switching time waveforms
t
DS
d (on)
Z
=3V
10%
50
t
50%
on
0.5
10%
t
r
Pulse width
1000
500
200
100
90%
50
20
10
5
2
0.1
Fig.12 Switching characteristics
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
t
t
0.2
d (on)
r
0
Fig.9 Reverse drain current vs.
t
d (off)
SOURCE-DRAIN VOLTAGE : V
DRAIN CURRENT : I
0.5
(See Figures 13 and 14 for
the measurment circuit and
resultant waveforms)
t
source-drain voltage ( I )
f
90%
1
t
d (off)
0.5
Rev.A
2
t
off
5
t
f
UM5K1N
50%
Ta=125˚C
10
D
10%
90%
1
( mA)
−25˚C
20
75˚C
25˚C
Ta =25˚C
V
V
R
Pulsed
DD
GS
G
V
Pulsed
50
SD
=10Ω
GS
=5V
=5V
( V)
=0V
100
3/3
1.5