UM5K1NTR Rohm Semiconductor, UM5K1NTR Datasheet - Page 2

• Manufacturer Part Number: UM5K1NTR
• Description: MOSFET 2N-CH 30V .1A SOT-353
• Manufacturer: Rohm Semiconductor

Specifications of UM5K1NTR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 13pF @ 5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Umt5: Module Configuration
• Transistor Polarity: Dual N Channel
• Continuous Drain Current Id: 10mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 4V
• Threshold: RoHS Compliant
• Configuration: Dual Common Source
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 150 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Transistors
<It is the same characteristics for Tr1 and Tr2.>
Fig.4 Static drain-source on-state
Static drain-source on-stage
resistance
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
0.15
0.05
Fig.1 Typical output characteristics
0.1
0
0.5
0
50
20
10
5
2
1
0.001
DRAIN-SOURCE VOLTAGE : V
resistance vs. drain current ( I )
0.002
Parameter
1
Ta=125˚C
4V
3.5V
DRAIN CURRENT : I
0.005
−25˚C
75˚C
25˚C
V
2
0.01 0.02
GS
2.5V
2V
=1.5V
3V
3
0.05
D
0.1
Ta=25˚C
Pulsed
4
( A)
DS
V
Pulsed
( V)
GS
0.2
=4V
V
Symbol
R
R
V
5
(BR)DSS
t
t
I
I
C
C
DS(on)
DS(on)
C
GS(th)
Y
d(on)
d(off)
GSS
DSS
0.5
t
t
oss
iss
rss
fs
r
f
Fig.5 Static drain-source on-state
Fig.2 Typical transfer characteristics
Min.
200m
100m
0.8
0.5m
0.2m
0.1m
30
20
50m
20m
10m
−
−
−
−
−
−
−
−
−
−
−
5m
2m
1m
0.5
50
20
10
0
5
2
1
0.001
V
Pulsed
resistance vs. drain current ( II )
DS
GATE-SOURCE VOLTAGE : V
0.002
=3V
Typ.
13
15
35
80
80
−
−
−
−
5
7
−
9
4
Ta=125˚C
1
DRAIN CURRENT : I
0.005 0.01 0.02
−25˚C
75˚C
25˚C
Max.
1.5
±1
13
−
1
8
−
−
−
−
−
−
−
−
2
Ta=125˚C
−25˚C
75˚C
25˚C
0.05
Unit
mS
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V
D
3
0.1
( A)
GS
V
Pulsed
GS
( V)
0.2
=2.5V
V
I
V
V
I
I
I
V
V
f = 1MHz
I
V
R
R
D
D
D
D
D
GS
DS
DS
DS
GS
GS
L
G
= 10µA, V
= 10mA, V
= 1mA, V
= 10mA, V
= 10mA, V
= 500Ω
4
= 10Ω
=± 20V, V
= 30V, V
= 3V, I
= 5V
= 0V
= 5V
0.5
D
Test Conditions
GS
= 100µA
GS
GS
GS
DS
DD
Fig.6 Static drain-source on-state
= 2.5V
DS
= 0V
= 0V
= 4V
= 3V
1.5
0.5
15
10
0
2
1
0
−50
5
= 0V
0
5V
Fig.3 Gate threshold voltage vs.
CHANNEL TEMPERATURE : Tch (˚C)
resistance vs.
gate-source voltage
−25
GATE-SOURCE VOLTAGE : V
channel temperature
0
5
Rev.A
25
50
10
UM5K1N
I
I
D
D
=0.05A
=0.1A
75
100 125 150
15
V
I
Pulsed
D
Ta=25˚C
Pulsed
GS
DS
=0.1mA
=3V
( V)
2/3
20