SI7922DN-T1-GE3 Vishay, SI7922DN-T1-GE3 Datasheet - Page 4
![MOSFET DL N-CH 100V PPAK 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7922DN-T1-GE3
Manufacturer Part Number
SI7922DN-T1-GE3
Description
MOSFET DL N-CH 100V PPAK 1212-8
Manufacturer
Vishay
Datasheet
1.SI7922DN-T1-GE3.pdf
(6 pages)
Specifications of SI7922DN-T1-GE3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
195 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7922DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7922DN-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
30 260
Si7922DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.01
0.6
0.4
0.2
0.0
0.1
- 50
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0
Threshold Voltage
T
10
J
2 5
Single Pulse
- Temperature (°C)
-3
5 0
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
D
= 250 µA
7 5
0.01
100
A
10
0.1
10
100
1
-2
= 25 °C, unless otherwise noted
0.1
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
125
GS
> minimum V
Limited
I
D(on)
V
Square Wave Pulse Duration (s)
150
DS
10
- Drain-to-Source Voltage (V)
DS(on)*
Single Pulse
T
1
-1
A
= 25 °C
GS
at which R
Limited
I
DM
DS(on)
10
1
50
40
30
20
10
0
0.001
is specified
Single Pulse Power, Junction-to-Ambient
0.01
100
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
0.1
- T
BV
A
Time (s)
t
1
= P
DSS
t
2
DM
S-81544-Rev. E, 07-Jul-08
Document Number: 72031
1
Limited
Z
thJA
th JA
100
t
t
1
2
(t)
= 77 °C/W
10
100
600
600