SI4922BDY-T1-E3 Vishay, SI4922BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4922BDY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4922BDY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 2070pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 50 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13.5mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.8V
• Fall Time: 8 ns, 54 ns
• Rise Time: 27 ns, 53 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4922BDY-T1-E3TR

Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
I
D
V
= 250 µA
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
150 °C
0.6
50
75
0.01
100
0.1
0.8
10
1
0.1
25 °C
100
Limited by R
Safe Operating Area, Junction-to-Ambient
* V
1.0
DS
125
> minimum V
V
DS
150
DS(on)
1.2
- Drain-to-Source Voltage (V)
Single Pulse
1
T
*
A
GS
= 25 °C
at which R
DS(on)
10
is specified
0.10
0.08
0.06
0.04
0.02
0.00
100
80
60
40
20
0
0
10 µs
100 µs
1 ms
10 ms
100 ms
DC
0 .
0
On-Resistance vs. Gate-to-Source Voltage
0
1
Single Pulse Power, Junction-to-Ambient
100
1
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
S09-0704-Rev. B, 27-Apr-09
125 °C
0.1
25 °C
Document Number: 74459
5
6
7
1
I
D
8
= 5 A
9
1
10
0