si4922bdy Vishay, si4922bdy Datasheet
si4922bdy
Available stocks
Related parts for si4922bdy
si4922bdy Summary of contents
Page 1
... Top View Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Sorce-Drain Current Single Pulse Avalanche Current ...
Page 2
... Si4922BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
Page 3
... Document Number: 74459 S-70237–Rev. A, 05-Feb-07 New Product 2.0 1.6 1.2 0 0.4 0.0 2.0 2.5 3000 2400 1800 1200 = 4.5 V 600 = 1.7 1 1.3 1.1 0.9 0 Si4922BDY Vishay Siliconix T = 125 ° ° °C J 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...
Page 4
... Si4922BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0.08 0.06 25 °C 0.04 0.02 0.00 0.8 1.0 1.2 75 100 125 150 100 *Limited by r DS(on 0 ° ...
Page 5
... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74459 S-70237–Rev. A, 05-Feb-07 New Product Package Limited 100 T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 0 Si4922BDY Vishay Siliconix 125 150 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...
Page 6
... Si4922BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...
Page 7
... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...