SI4922BDY-T1-E3 Vishay, SI4922BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4922BDY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4922BDY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 2070pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 50 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13.5mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.8V
• Fall Time: 8 ns, 54 ns
• Rise Time: 27 ns, 53 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4922BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
0.030
0.026
0.022
0.018
0.014
0.010
40
32
24
16
10
8
0
8
6
4
2
0
0.0
0
On-Resistance vs. Drain Current and Gate Voltage
0
I
D
= 5 A
0.5
8
9
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
V
- Total Gate Charge (nC)
V
I
GS
D
DS
GS
Gate Charge
- Drain Current (A)
1.0
16
18
= 10 V thru 3 V
= 10 V
= 2.5 V
V
V
V
DS
GS
GS
= 20 V
1.5
24
27
= 4.5 V
= 10 V
V
DS
2.0
32
= 15 V
36
2 V
2.5
40
45
3000
2400
1800
1200
600
2.0
1.6
1.2
0.8
0.4
0.0
1.7
1.5
1.3
1.1
0.9
0.7
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
I
- 25
D
C
oss
= 5 A
0.6
6
T
T
V
J
V
J
GS
Transfer Characteristics
= 25 °C
DS
0
T
C
= 125 °C
J
iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
25
V
Capacitance
1.2
12
GS
= 4.5 V
50
Vishay Siliconix
T
1.8
18
J
Si4922BDY
75
= - 55 °C
V
GS
100
= 10 V
www.vishay.com
2.4
24
125
3.0
150
30
3