SI4906DY-T1-E3 Vishay, SI4906DY-T1-E3 Datasheet - Page 6

MOSFET N-CH DUAL 40V 6.6A 8-SOIC

SI4906DY-T1-E3

Manufacturer Part Number
SI4906DY-T1-E3
Description
MOSFET N-CH DUAL 40V 6.6A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4906DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 50 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.039 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
5.3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.6A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4906DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4906DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 952
Part Number:
SI4906DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4906DY-T1-E3
Quantity:
70 000
Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73867.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.02
0.02
0.05
0.05
0.2
0.1
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
P
DM
JM
1
S09-2432-Rev. C, 16-Nov-09
- T
A
Document Number: 73867
t
1
= P
100
t
2
DM
Z
thJA
thJA
t
t
1
2
(t)
= 120 °C/W
1000
10

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