SI4906DY-T1-E3 Vishay, SI4906DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4906DY-T1-E3
• Description: MOSFET N-CH DUAL 40V 6.6A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4906DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 50 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.039 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2.2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4906DY-T1-E3TR

TYPICAL CHARACTERISTICS
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
0.060
0.052
0.044
0.036
0.028
0.020
10
30
24
18
12
6
0
8
6
4
2
0
0.0
On-Resistance vs. Drain Current and Gate Voltage
0
0
I
D
= 5 A
0.5
4
3
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
- Total Gate Charge (nC)
I
D
Gate Charge
V
- Drain Current (A)
1.0
DS
6
8
= 10 V
V
V
GS
GS
1.5
12
V
9
= 4.5 V
= 10 V
DS
V
GS
= 20 V
25 °C, unless otherwise noted
3 V
= 10 V thru 4 V
V
DS
2.0
12
16
= 30 V
2.5
15
20
900
720
540
360
180
2.0
1.6
1.2
0.8
0.4
0.0
1.8
1.5
1.2
0.9
0.6
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
I
D
C
- 25
oss
= 5 A
0.8
6
V
V
Transfer Characteristics
DS
GS
0
T
T
C
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 125 °C
- Junction Temperature (°C)
25 °C
Capacitance
25
1.6
12
V
C
50
GS
iss
Vishay Siliconix
= 10 V
2.4
18
- 55 °C
75
Si4906DY
V
100
GS
www.vishay.com
3.2
24
= 4.5 V
125
4.0
150
30
3