SI4906DY-T1-E3 Vishay, SI4906DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4906DY-T1-E3
• Description: MOSFET N-CH DUAL 40V 6.6A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4906DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 50 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.039 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2.2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4906DY-T1-E3TR

Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
10
- 0.2
- 0.4
- 0.6
1
0.4
0.2
0.0
0.0
- 50
I
Source-Drain Diode Forward Voltage
D
- 25
0.2
= 5 mA
I
V
D
SD
= 250 µA
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
T = 150 °C
25
J
- Temperature (°C)
0.6
50
0.01
100
0.1
10
75
0.8
1
0.1
25 °C
100
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
A
GS
1.0
= 25 °C
125
V
DS
minimum V
DS(on)
- Drain-to-Source Voltage (V)
150
1.2
1
*
GS
at which R
10
DS(on)
0.30
0.24
0.18
0.12
0.06
0.00
100
80
60
40
20
is specified
0
0.001
0
1 ms
100 ms
10 s
Single Pulse Power, Junction-to-Ambient
10 ms
1 s
DC
On-Resistance vs. Gate-to-Source Voltage
100
2
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
125 °C
25 °C
0.1
S09-2432-Rev. C, 16-Nov-09
Document Number: 73867
6
1
8
10
10