SI1972DH-T1-E3 Vishay, SI1972DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1972DH-T1-E3
• Description: MOSFET N-CH DUAL 30V 1.3A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1972DH-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 2.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 75pF @ 15V
• Power - Max: 740mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.225 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 740 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 344mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1972DH-T1-E3TR

Si1972DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
0.1
10
1
- 50
0
- 25
0.2
V
SD
0
Forward Diode Voltage
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
75
0.8
0.01
0.1
10
I
1
D
0.1
100
T
= 250 µA
J
* V
Safe Operating Area, Junction-to-Ambient
= 25 °C
Limited by R
1.0
Single Pulse
T
GS
125
A
= 25 °C
V
minimum V
DS
150
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
5
4
3
2
1
0
is specified
0
I
D
100 µs
10 ms
100 ms
1 s, 10 s
DC
1 ms
On-Resistance vs. Gate-Source Voltage
= 1.3 A
0.1
2
100
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
4
1
Time (s)
S10-0721-Rev. B, 29-Mar-10
Document Number: 74398
6
10
125 °C
25 °C
8
100
600
10