SI1972DH-T1-E3 Vishay, SI1972DH-T1-E3 Datasheet
SI1972DH-T1-E3
Specifications of SI1972DH-T1-E3
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SI1972DH-T1-E3 Summary of contents
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... Top View Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free) Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si1972DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Drain Current (A) D On-Resistance vs. Drain Current 1 0.0 0.5 1 Total Gate Charge (nC) g Gate Charge Document Number: 74398 S10-0721-Rev. B, 29-Mar- 1.6 2 1.5 2.0 Si1972DH Vishay Siliconix 1.0 0 125 ° ° °C C 0.2 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 100 80 C iss oss 20 C ...
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... Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Forward Diode Voltage 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.6 0.5 0.4 0.3 0 °C 0 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1972DH Vishay Siliconix 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ...
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... Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwiese noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...