SI1972DH Vishay Siliconix, SI1972DH Datasheet

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SI1972DH

Manufacturer Part Number
SI1972DH
Description
Dual N-Channel 30 V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1972DH-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
74 047
Part Number:
SI1972DH-T1-E3
Manufacturer:
VISHAY
Quantity:
310
www.DataSheet.co.kr
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Document Number: 74398
S10-0721-Rev. B, 29-Mar-10
G
D
S
Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
1
2
1
V
DS
30
1
2
3
(V)
SC-70 (6-LEADS)
Top
SOT-363
View
0.344 at V
0.190 at V
Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
6
5
4
GS
GS
D
G
S
(Ω)
J
= 4.5 V
= 10 V
1
2
2
= 150 °C)
b, f
Dual N-Channel 30 V (D-S) MOSFET
I
D
Marking Code
1.3
1.3
(A)
CE
a
d, e
XX
A
Part # Code
= 25 °C, unless otherwise noted
Q
0.91 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
Lot Traceability
and Date Code
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Applications
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
thJF
DS
GS
D
S
D
stg
G
1
N-Ch a nnel MO S FET
®
Power MOSFET
Typical
D
S
130
1
1
80
- 55 to 150
0.74
0.47
Limit
0.61
± 20
1.3
1.3
1.3
1.25
260
1.2
1.0
0.8
30
4
b, c
b, c
a
a
a
c
Maximum
G
2
170
100
Vishay Siliconix
N-Ch a nnel MO S FET
Si1972DH
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI1972DH Summary of contents

Page 1

... Top View Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free) Si1972DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si1972DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 74398 S10-0721-Rev. B, 29-Mar- thru 1.2 1.6 2 1.0 1.5 2.0 Si1972DH Vishay Siliconix 1.0 0 125 ° ° °C C 0.2 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 100 C 80 ...

Page 4

... Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.1 0 0.2 0 Source-to-Drain Voltage (V) SD Forward Diode Voltage 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 = 150 ° °C J 0.6 0.8 1.0 1 250 µ 100 125 150 10 Limited DS(on °C ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74398 S10-0721-Rev. B, 29-Mar-10 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1972DH Vishay Siliconix 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ...

Page 6

... Si1972DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwiese noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...

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