J174,126 NXP Semiconductors, J174,126 Datasheet - Page 6

JFET P-CHAN 30V SOT-54

J174,126

Manufacturer Part Number
J174,126
Description
JFET P-CHAN 30V SOT-54
Manufacturer
NXP Semiconductors
Datasheets

Specifications of J174,126

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
20mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
5V @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
85 Ohm
Mounting Type
Through Hole
Power - Max
400mW
Configuration
Single
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
85 Ohms
Drain Source Voltage Vds
30 V
Gate-source Cutoff Voltage
5 V to 10 V
Gate-source Breakdown Voltage
30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
135 mA
Drain Current (idss At Vgs=0)
20 mA to 135 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934005290126
J174 AMO
J174 AMO
Philips Semiconductors
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
P-channel silicon field-effect transistors
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
6
Product specification
J174; J175;
J176; J177

Related parts for J174,126