J174,126 NXP Semiconductors, J174,126 Datasheet - Page 2

• Manufacturer Part Number: J174,126
• Description: JFET P-CHAN 30V SOT-54
• Manufacturer: NXP Semiconductors

Specifications of J174,126

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 20mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 5V @ 10nA
• Input Capacitance (ciss) @ Vds: 8pF @ 10V (VGS)
• Resistance - Rds(on): 85 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 85 Ohms
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: 5 V to 10 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 135 mA
• Drain Current (idss At Vgs=0): 20 mA to 135 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934005290126; J174 AMO; J174 AMO

Philips Semiconductors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections.
PINNING
Note: Drain and source are
interchangeable.
QUICK REFERENCE DATA
April 1995
1 =
2 =
3 =
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
Drain current
Drain-source ON-resistance
P-channel silicon field-effect transistors
up to T
V
V
DS
DS
source
gate
drain
= 0.1 V; V
= 15 V; V
amb
= 50 C
GS
GS
= 0
= 0
handbook, halfpage
V
P
R
I
I
GSO
tot
DS on
V
G
DSS
DS
Fig.1 Simplified outline and symbol, TO-92.
2
1
2
3
max.
max.
max.
max.
min.
max.
max.
J174
135
85
20
J175
125
70
MAM388
7
400
30
30
50
g
J176
250
35
Product specification
2
J174; J175;
J176; J177
d
s
J177
300
1.5
20
V
V
mA
mW
mA
mA