BFR31,215 NXP Semiconductors, BFR31,215 Datasheet - Page 7

• Manufacturer Part Number: BFR31,215
• Description: FET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR31,215

• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933163490215::BFR31 T/R::BFR31 T/R

NXP Semiconductors
1997 Dec 05
handbook, halfpage
handbook, halfpage
N-channel field-effect transistors
Fig.13 Common source output admittance as a
V
Fig.11 Common source transfer admittance as a
f = 1 kHz; T
(1) I
(mA/V)
(μA/V)
DS
|y os |
y fs
7.5
2.5
10
10
10
= 10 V; f = 1 kHz; T
D
10
5
0
4
3
2
= 4 mA. (2) I
0
0
function of drain-source voltage;
typical values.
function of drain current; typical values.
amb
= 25 C.
(1)
(2)
D
= 1 mA.
amb
10
2
= 25 C.
BFR31
BFR30
20
4
I D (mA)
V DS (V)
BFR30
BFR31
MDA664
MDA666
30
6
7
handbook, halfpage
handbook, halfpage
V
V
(μA/V)
DS
DS
Fig.12 Common source output admittance as a
y os
(pF)
C is
= 10 V; f = 1 kHz; T
= 10 V; f = 1 MHz; T
Fig.14 Input capacitance as a function of
75
50
25
0
5
4
3
2
1
0
0
0
function of drain current; typical values.
gate-source voltage; typical values.
−1
amb
amb
2
= 25 C.
−2
= 25 C.
BFR30
BFR31
BFR30; BFR31
−3
4
Product specification
I D (mA)
−4
V GS (V)
MDA665
MDA667
−5
6