BFR31,215 NXP Semiconductors, BFR31,215 Datasheet
BFR31,215
Specifications of BFR31,215
Related parts for BFR31,215
BFR31,215 Summary of contents
Page 1
DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 DISCRETE SEMICONDUCTORS 1997 Dec 05 ...
Page 2
... NXP Semiconductors N-channel field-effect transistors DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. APPLICATIONS Low level general purpose amplifiers in thick and thin-film circuits. PINNING - SOT23 PIN SYMBOL 1 d drain 2 s source 3 g gate Note 1. Drain and source are interchangeable. ...
Page 3
... NXP Semiconductors N-channel field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS V drain-gate voltage DGO V gate-source voltage GSO I drain current D I forward gate current (DC total power dissipation tot T storage temperature stg T operating junction temperature ...
Page 4
... NXP Semiconductors N-channel field-effect transistors CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I gate cut-off current GSS I drain current DSS BFR30 BFR31 V gate-source voltage GS BFR30 BFR31 V gate-source voltage GS BFR30 BFR31 V gate-source cut-off voltage GSoff BFR30 BFR31 y common-source transfer admittance fs BFR30 BFR31 ...
Page 5
... NXP Semiconductors N-channel field-effect transistors 10 handbook, halfpage I D (mA −4 −3 −2 BFR30 Fig.3 Input characteristics. 5 handbook, halfpage I D (mA −5 −4 −3 BFR31 Fig.5 Input characteristics. 1997 Dec 05 MDA657 handbook, halfpage max typ min − (V) MDA659 handbook, halfpage max typ min − ...
Page 6
... NXP Semiconductors N-channel field-effect transistors 6 handbook, halfpage I D (mA BFR30 Fig.7 Drain current as a function of junction temperature; typical values. 10 handbook, halfpage I GSS (nA) 1 −1 10 −2 10 − 100 = Fig.9 Gate cut-off current as a function of junction temperature; typical values. 1997 Dec 05 MDA661 handbook, halfpage ...
Page 7
... NXP Semiconductors N-channel field-effect transistors 7.5 handbook, halfpage y fs (mA/V) 5 BFR31 BFR30 2 kHz amb Fig.11 Common source transfer admittance as a function of drain current; typical values handbook, halfpage | (μA/ (1) ( kHz; T amb ( mA Fig.13 Common source output admittance as a function of drain-source voltage; ...
Page 8
... NXP Semiconductors N-channel field-effect transistors −1 handbook, halfpage C rs (pF) −0.8 −0.6 −0.4 −0.2 0 −1 − MHz amb Fig.15 Feedback capacitance as a function of gate-source voltage; typical values handbook, full pagewidth e n (nV/ Hz amb (1) BFR31 mA. D (2) BFR30 mA. D Fig.16 Equivalent noise voltage source as a function of frequency; typical values. ...
Page 9
... NXP Semiconductors N-channel field-effect transistors 4 10 handbook, full pagewidth i n (fA/ Hz amb (1) BFR31 mA. D (2) BFR30 mA. D Fig.17 Equivalent noise current source as a function of frequency; typical values. 1997 Dec Product specification BFR30; BFR31 MDA670 (1) ( (Hz) ...
Page 10
... NXP Semiconductors N-channel field-effect transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 1997 Dec scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...
Page 11
... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
Page 12
... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 13
... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...