PMBFJ113,215 NXP Semiconductors, PMBFJ113,215 Datasheet - Page 5

• Manufacturer Part Number: PMBFJ113,215
• Description: MOSFET N-CH 40V 2MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ113,215

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 100 Ohms
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: - 0.5 V
• Gate-source Breakdown Voltage: - 40 V
• Drain Current (idss At Vgs=0): 2 mA
• Power Dissipation: 300 mW
• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -40V
• Drain-gate Voltage (max): -40V
• Drain-source Volt (max): 40V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933929750215::PMBFJ113 T/R::PMBFJ113 T/R

Philips Semiconductors
9. Package outline
Fig 3. Package outline.
9397 750 13402
Product data sheet
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
PMBFJ111; PMBFJ112; PMBFJ113
JEDEC
1.4
1.2
E
REFERENCES
0
Rev. 03 — 4 August 2004
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
w
L p
N-channel junction FETs
A
Q
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
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