PMBFJ113,215 NXP Semiconductors, PMBFJ113,215 Datasheet - Page 8

• Manufacturer Part Number: PMBFJ113,215
• Description: MOSFET N-CH 40V 2MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ113,215

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 100 Ohms
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: - 0.5 V
• Gate-source Breakdown Voltage: - 40 V
• Drain Current (idss At Vgs=0): 2 mA
• Power Dissipation: 300 mW
• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -40V
• Drain-gate Voltage (max): -40V
• Drain-source Volt (max): 40V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933929750215::PMBFJ113 T/R::PMBFJ113 T/R

Philips Semiconductors
15. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
Dynamic characteristics . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 6
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Contact information . . . . . . . . . . . . . . . . . . . . . 7
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
PMBFJ111; PMBFJ112; PMBFJ113
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Published in The Netherlands
N-channel junction FETs
Document order number: 9397 750 13402
Date of release: 4 August 2004