PMBFJ113,215 NXP Semiconductors, PMBFJ113,215 Datasheet - Page 8
![MOSFET N-CH 40V 2MA SOT23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
PMBFJ113,215
Manufacturer Part Number
PMBFJ113,215
Description
MOSFET N-CH 40V 2MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ113215.pdf
(8 pages)
Specifications of PMBFJ113,215
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Package / Case
SOT-23
Resistance Drain-source Rds (on)
100 Ohms
Drain Source Voltage Vds
40 V
Gate-source Cutoff Voltage
- 0.5 V
Gate-source Breakdown Voltage
- 40 V
Drain Current (idss At Vgs=0)
2 mA
Power Dissipation
300 mW
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
-40V
Drain-source Volt (max)
40V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933929750215::PMBFJ113 T/R::PMBFJ113 T/R
Philips Semiconductors
15. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
Dynamic characteristics . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 6
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Contact information . . . . . . . . . . . . . . . . . . . . . 7
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
PMBFJ111; PMBFJ112; PMBFJ113
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Published in The Netherlands
N-channel junction FETs
Document order number: 9397 750 13402
Date of release: 4 August 2004