BUP213 Infineon Technologies, BUP213 Datasheet - Page 4

• Manufacturer Part Number: BUP213
• Description: IGBT 1200V 32A TO-220
• Manufacturer: Infineon Technologies

Specifications of BUP213

• Package / Case: TO-220AB
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 32A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 32 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP213IN

Infineon
Power dissipation
P
parameter: T
P
Safe operating area
I
parameter: D = 0 , T
Semiconductor Group
C
tot
I
tot
C
= ( V
= ( T
10
10
10
10
220
180
160
140
120
100
80
60
40
20
W
A
-1
0
2
1
0
10
CE
0
C
0
)
)
20
j
150 °C
40
10
1
C
60
= 25°C , T
80
10
2
100
j
DC
120
150 °C
t
10
p = 9.0µs
3
10 µs
100 µs
1 ms
10 ms
T
V
°C
C
CE
V
160
4
Collector current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= ( T
K/W
10
10
10
10
= ( t
32
24
20
16
12
A
-1
-2
-3
8
4
0
0
C
10
0
)
-5
p
)
20
GE
single pulse
10
p
40
-4
15 V , T
/ T
60
10
-3
j
80
150 °C
10
100
-2
IGBT
120
Nov-30-1995
BUP 213
D = 0.50
10
T
t
-1
°C
p
0.20
0.10
0.05
0.02
0.01
C
s
160
10
0