BUP213 Infineon Technologies, BUP213 Datasheet

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BUP213

Manufacturer Part Number
BUP213
Description
IGBT 1200V 32A TO-220
Manufacturer
Infineon Technologies
Datasheets

Specifications of BUP213

Package / Case
TO-220AB
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 15A
Current - Collector (ic) (max)
32A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
32 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
Other names
BUP213IN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUP213
Manufacturer:
SIEMENS
Quantity:
2 005
Part Number:
BUP213
Manufacturer:
FSC
Quantity:
30 000
IGBT Chip in NPT-technology
FEATURES:
Chip Type
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003
SIGC25T120C
1200V NPT technology
200µm chip
positive temperature coefficient
easy paralleling
V
1200V
CE
I
Cn
15A
Die Size
5.71 x 4.53 mm
This chip is used for:
Applications:
BUP 213
drives
suitable for epoxy and soft solder die bonding
< 6 month at an ambient temperature of 23°C
store in original container, in dry nitrogen,
electrically conductive glue or solder
2 x ( 2.18 x 1.6 )
2
1400 nm Ni Ag –system
5.71 x 4.53
1.09 x 0.68
25.9 / 18.7
0.65mm ; max 1.2mm
3200 nm Al Si 1%
Package
180
150
270
sawn on foil
SIGC25T120C
Al, <500µm
Photoimide
555 pcs
Ordering Code
C67078-A4674-
G
A001
mm
mm
µm
grd
C
E
2

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BUP213 Summary of contents

Page 1

... Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment Edited by INFINEON Technologies HV3, L 7141-M, Edition 2, 03.09.2003 This chip is used for: BUP 213 Applications: drives I Die Size Cn 2 15A 5 ...

Page 2

... Output capacitance Reverse transfer capacitance SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies HV3, L 7141-M, Edition 2, 03.09.2003 Symbol jmax C I jmax ...

Page 3

... CHIP DRAWING: Edited by INFINEON Technologies HV3, L 7141-M, Edition 2, 03.09.2003 SIGC25T120C ...

Page 4

... Life support devices or systems are intended to be implanted in the human body support and / or maintain and sustain and / or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies HV3, L 7141-M, Edition 2, 03.09.2003 SIGC25T120C BUP213 Package TO220 ...

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