IRG4RC10SD International Rectifier, IRG4RC10SD Datasheet
IRG4RC10SD
Specifications of IRG4RC10SD
Available stocks
Related parts for IRG4RC10SD
IRG4RC10SD Summary of contents
Page 1
... When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com G TM ultrafast, n-channel Typ. ––– ––– ––– 0.3 (0.01) PD-91678B IRG4RC10SD Standard Speed CoPack IGBT C CES = CE(on) typ Max. Units 600 ...
Page 2
... IRG4RC10SD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
Page 3
... Frequency (KHz) (Load Current = I of fundamental) RMS 100 ° 150 150 15V 1 2.5 3.0 6 Fig Typical Transfer Characteristics IRG4RC10SD For both: Duty cycle: 50 125° 90°C PCB Mount 55°C sink Gate drive as specified 1.4 Power Dissipation = W 10 ° ° ...
Page 4
... IRG4RC10SD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3. 15V PULSE WIDTH 2.50 2.00 1.50 1.00 -60 -40 -20 ...
Page 5
... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 100 0.1 80 100 -60 -40 -20 Fig Typical Switching Losses vs. IRG4RC10SD = 400V = Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω = Ohm = 15V = 480V 100 120 140 160 ° Junction Temperature ( Junction Temperature ...
Page 6
... IRG4RC10SD 15 Ω 100 150 C ° 480V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector Current 100 10 1 0.1 0.0 6 100 SAFE OPERATING AREA 150° 125° 25°C J 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - V ( 20V = 125 100 ...
Page 7
... Fig Typical Stored Charge vs. di www.irf.com 200V 125° 25° 1000 100 Fig Typical Recovery Current vs. di /dt f 1000 V = 200V 125° 25° 8. 4.0A F 100 1000 100 /dt Fig Typical di f IRG4RC10SD 1000 di /dt - (A/µ 1000 di /dt - (A/µs) f /dt vs. di /dt, (rec ...
Page 8
... IRG4RC10SD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same type device as D.U.T. D.U. 90% 10 d(off d(on) Fig. 18b - Test Waveforms for Circuit of Fig ...
Page 9
... Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. Figure 20. Pulsed Collector Current IRG4RC10SD Test Circuit L C Test Circuit 9 ...
Page 10
... IRG4RC10SD 5 10 ,5)5 $ ,5)5 www.irf.com ...
Page 11
... TRR 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) FEED DIRECTION 7.9 ( .312 ) 100W (figure 19 Data and specifications subject to change without notice. Visit us at www.irf.com for sales contact information. 06/05 IRG4RC10SD TRL 16.3 ( .641 ) 15.7 ( .619 ) FEED DIRECTION TAC Fax: (310) 252-7903 11 ...