IRG4RC10U International Rectifier, IRG4RC10U Datasheet

07B1613

IRG4RC10U

Manufacturer Part Number
IRG4RC10U
Description
07B1613
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4RC10U

Dc Collector Current
8.5A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
38W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
No

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Part Number
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Quantity
Price
Part Number:
IRG4RC10U
Manufacturer:
IR
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IR
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Part Number:
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INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
* When mounted on 1" square PCB (FR-4 or G-10 Material).
Features
Features
Features
Features
Features
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-252AA package
www.irf.com
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
For recommended footprint and soldering techniques refer to application note #AN-994
C
C
CM
LM
parameter distribution and higher efficiency than
kHz in resonant mode)
previous generation
J
STG
CES
GE
ARV
D
D
frequencies ( 8-40 kHz in hard switching, >200
JC
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
0.3 (0.01)
Typ.
–––
–––
E
C
-55 to +150
IRG4RC10U
TO-252AA
Max.
UltraFast Speed IGBT
D-PAK
600
±20
110
8.5
5.0
34
34
38
15
@V
V
CE(on) typ.
Max.
V
GE
–––
3.3
50
CES
= 15V, I
PD - 91572A
= 600V
C
2.15V
= 5.0A
Units
°C/W
g (oz)
Units
W
mJ
°C
V
A
V
1
8/30/99

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IRG4RC10U Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case JC R Junction-to-Ambient (PCB mount Weight * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com PD - 91572A IRG4RC10U UltraFast Speed IGBT C V CES V CE(on) typ 15V n-channel D-PAK TO-252AA Max ...

Page 2

... IRG4RC10U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage „ V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance … Zero Gate Voltage Collector Current CES ...

Page 3

... Fig Typical Output Characteristics www.irf.com uty c ycle : ° 5° drive cified Typ Frequency (kHz) (Load Current = I of fundamental) RMS 100 150 150 15V Fig Typical Transfer Characteristics IRG4RC10U T ria lam p vo lta rate 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4RC10U 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0.1 0.01 90 100 -60 -40 -20 ( Fig Typical Switching Losses vs. IRG4RC10U = 400V = 5. Total Gate Charge (nC) G Gate-to-Emitter Voltage 100 = 100Ohm = 15V = 480V 5 2 100 120 140 160 ° Junction Temperature ( ...

Page 6

... IRG4RC10U 1.0 100 R = 100Ohm 150 C ° 480V 15V 0.8 GE 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current L 50V  * Driver e Note: Due to the 5 0V pow e r supply, puls e w idth and inductor w ill incre obta in rated Id. ...

Page 7

... B - 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (. TES : SIO N ING & 14 82 SIO 4 -252 SIO +0.16 (. IRG4RC10U Fig. 14b - Switching Loss Waveforms 1.1 4 (.045 ) 0.8 9 (.035 ) 0.58 (.0 23) 0.46 (. (.22 4) LEAD ASSIGNMENTS SIG GATE COLLECTOR ...

Page 8

... IRG4RC10U Tape & Reel Information TO-252AA ILLIM ILL & - LIN -481 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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