IRG4RC10SD International Rectifier, IRG4RC10SD Datasheet - Page 4

• Manufacturer Part Number: IRG4RC10SD
• Description: IGBT STD W/DIODE 600V 8.0A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 8A
• Current - Collector (ic) (max): 14A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4RC10SD

IRG4RC10SD
Fig. 4 - Maximum Collector Current vs. Case
0.01
4
16
12
0.1
10
0.00001
8
4
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
C
Temperature
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
°
125
t , Rectangular Pulse Duration (sec)
1
0.001
150
Fig. 5 - Typical Collector-to-Emitter Voltage
3.00
2.50
2.00
1.50
1.00
-60 -40 -20
0.01
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
J
20 40 60 80 100 120 140 160
DM
x Z
1
0.1
thJC
2
P
DM
+ T
www.irf.com
C
I =
I =
I =
t
C
C
C
1
t
2
16
8
4
°
A
A
A
1