IKW40N120T2 Infineon Technologies, IKW40N120T2 Datasheet - Page 8

• Manufacturer Part Number: IKW40N120T2
• Description: IGBT 1200V 75A 480W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW40N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 480W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 75.0 A
• Ic(max) @ 100°: 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
20.0mJ
15.0mJ
10.0mJ
7.5mJ
5.0mJ
2.5mJ
0.0mJ
Figure 13. Typical switching energy losses as
Figure 15. Typical switching energy losses as
5.0mJ
0.0mJ
*) E
*) E
due to diode recovery
a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
due to diode recovery
on
T
C
0°C
GE
=40A, R
on
J
and E
I
,
20A
C
=0/15V, R
and E
,
JUNCTION TEMPERATURE
COLLECTOR CURRENT
ts
include losses
ts
include losses
G
50°C
=12Ω,
G
40A
=12Ω,
J
CE
=175°C, V
=600V, V
100°C
60A
CE
GE
=600V,
150°C
=0/15V,
TrenchStop
E
E
E
off
on
ts
E
*
*
E
E
8
ts
on
off
*
*
Figure 14. Typical switching energy losses as a
Figure 16. Typical switching energy losses as
10.0 mJ
10.0mJ
®
7.5 mJ
5.0 mJ
2.5 mJ
0.0 mJ
7.5mJ
5.0mJ
2.5mJ
0.0mJ
2
nd
400V
Generation Series
E
V
ts
CE
*
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of collector emitter
voltage
(inductive load, T
I
Dynamic test circuit in Figure E)
C
*) E
,
GE
=40A, R
*) E
due to diode recovery
COLLECTOR
=0/15V, I
due to diode recovery
on
on
R
and E
500V
G
and E
,
GATE RESISTOR
IKW40N120T2
G
ts
=12Ω,
ts
include losses
C
include losses
-
=40A,
EMITTER VOLTAGE
600V
J
J
=175°C, V
=175°C, V
Rev. 2.2
700V
CE
GE
=600V,
=0/15V,
E
Sep 08
on
E
E
E
E
*
off
ts
on
off
*
*