IKW40N120T2 Infineon Technologies, IKW40N120T2 Datasheet - Page 10

IGBT 1200V 75A 480W TO247-3

IKW40N120T2

Manufacturer Part Number
IKW40N120T2
Description
IGBT 1200V 75A 480W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW40N120T2

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
480W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
480W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™2 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
75.0 A
Ic(max) @ 100°
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Power Semiconductors
10
10
10
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
600V
400V
200V
-1
-2
-3
0V
K/W
K/W
K/W
0us
V
10µs
I
C
CE
D=0.5
0.05
0.1
0.2
(V
Dynamic test circuit in Figure E)
(D = t
0.4us
GE
100µs
=0/15V, R
single pulse
0.02
0.01
p
t
P
/ T)
,
PULSE WIDTH
t,
0.8us
1ms
TIME
G
R
0.064
0.074
0.162
0.010
=12Ω, T
R , ( K / W )
1
C
1
=
10ms
1
/ R
1.2us
1
j
= 175 C,
C
3.67*10
3.92*10
1.92*10
3.40*10
2
100ms
=
, ( s )
2
/ R
TrenchStop
R
2
-4
-3
-2
-1
60A
40A
20A
0A
2
10
Figure 22. Typical turn off behavior
Figure 24. Diode transient thermal impedance
60A
40A
20A
10
10
10
®
0A
0us
-1
-2
-3
2
K/W
K/W
K/W
V
I
nd
C
CE
Generation Series
10µs
D=0.5
0.05
(V
Dynamic test circuit in Figure E)
as a function of pulse width
(D=t
0.2
0.1
0.4us
GE
=15/0V, R
P
100µs
/T)
0.02
0.01
single pulse
t
P
,
PULSE WIDTH
IKW40N120T2
0.8us
t,
TIME
1ms
G
=12Ω, T
R
0.112
0.163
0.234
0.015
R , ( K / W )
1
C
1
=
1.2us
10ms
1
/ R
j
Rev. 2.2
= 175 C,
1
C
2.80*10
3.27*10
1.71*10
2.68*10
2
=
100ms
, ( s )
2
/ R
600V
400V
200V
0V
Sep 08
R
2
-4
-3
-2
-1
2

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