IKW40T120 Infineon Technologies, IKW40T120 Datasheet

IGBT 1200V 75A 270W TO247-3

IKW40T120

Manufacturer Part Number
IKW40T120
Description
IGBT 1200V 75A 270W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW40T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
270W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
75A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Max
270W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Power Dissipation Pd
270W
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
75.0 A
Ic(max) @ 100°
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW40T120
Manufacturer:
INFINEON
Quantity:
15 000
Part Number:
IKW40T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IKW40T120
Quantity:
9 000
Part Number:
IKW40T120T2
Manufacturer:
INFINEON
Quantity:
12 000
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
Type
IKW40T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction temperature
Storage temperature
1
2)
Power Semiconductors
C
C
C
C
C
CE
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
Best in class TO247
Short circuit withstand time – 10 s
Designed for :
TrenchStop and Fieldstop technology for 1200 V applications
offers :
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
= 15V, V
1200V, T
- Frequency Converters
- Uninterrupted Power Supply
- very tight parameter distribution
- high ruggedness, temperature stable behavior
CC
j
®
1200V
1200V, T
150 C
V
CE
p
limited by T
p
j
40A
limited by T
2)
I
C
with soft, fast recovery anti-parallel EmCon HE diode
150 C
V
1
CE(sat),Tj=25°C
for target applications
jmax
1.7V
jmax
CE(sat)
TrenchStop Series
150 C
1
T
j,max
http://www.infineon.com/igbt/
®
®
K40T120
Marking
Symbol
V
I
I
-
I
I
V
t
P
T
T
C
C p u l s
F
F p u l s
S C
j
s t g
C E
G E
t o t
PG-TO-247-3-21
Package
-40...+150
-55...+150
IKW40T120
Value
1200
105
105
105
270
75
40
80
40
10
20
Rev. 2.1
PG-TO-247-3-21
G
V
A
V
W
Unit
C
s
May 06
C
E

Related parts for IKW40T120

IKW40T120 Summary of contents

Page 1

... Power Semiconductors ® TrenchStop Series ® CE(sat) 1 for target applications http://www.infineon.com/igbt Marking CE(sat),Tj=25°C j,max 1.7V K40T120 150 C Symbol jmax jmax IKW40T120 PG-TO-247-3-21 Package PG-TO-247-3-21 Value Unit 1200 105 105 80 40 105 270 W -40...+150 C -55...+150 Rev. 2.1 May 06 ...

Page 2

... Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors ® TrenchStop Series - 2 IKW40T120 260 Rev. 2.1 May 06 ...

Page 3

... Gate-emitter leakage current Transconductance Integrated gate resistor Power Semiconductors ® TrenchStop Series Symbol Conditions Symbol Conditions . IKW40T120 Max. Value Unit 0.45 K/W 0.81 40 Value Unit min. typ. max. 1200 - - V - 1.8 2 1.75 2 1.75 - 5.0 5 600 Ω Rev. 2.1 May 06 ...

Page 4

... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® TrenchStop Series = Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW40T120 - 2500 - pF - 130 - - 110 - - 203 - 210 - A Value Unit min. typ. max 480 - - 240 - ns - 3.8 µ 370 - A/ s Rev. 2.1 May 06 ...

Page 5

... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® TrenchStop Series =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW40T120 Value Unit min. typ. max 580 - - 120 - - 410 - ns - 8.8 - µ 330 A/ s Rev. 2.1 May 06 ...

Page 6

... Figure 2. Safe operating area = 600V 70A 60A 50A 40A 30A 20A 10A 0A 25°C 100°C 125°C Figure 4. Collector current as a function of 6 IKW40T120 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125° CASE TEMPERATURE ...

Page 7

... V Figure 6. Typical output characteristic 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 8V 10V 12V -50°C Figure 8. Typical collector-emitter 7 IKW40T120 V =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150°C) j 0°C 50°C 100° JUNCTION TEMPERATURE ...

Page 8

... TrenchStop Series 1000 ns 100 60A Figure 10. Typical switching times as a =15Ω 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as =600V, =15Ω IKW40T120 t d(off d(on GATE RESISTOR G function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =40A Dynamic test circuit in Figure E) 0° ...

Page 9

... G 15mJ 10mJ E E off 5mJ 0mJ 150°C 400V V Figure 16. Typical switching energy losses =600V, =15Ω IKW40T120 *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =40A Dynamic test circuit in Figure ...

Page 10

... V CE Figure 18. Typical capacitance as a function 300A 200A 100A 0A 16V 12V V Figure 20. Typical short circuit collector = 25° IKW40T120 10V 20V , - COLLECTOR EMITTER VOLTAGE of collector-emitter voltage ( V =0V MHz) GE 14V 16V 18V , - GATE EMITTETR VOLTAGE GE current as a function of gate- ...

Page 11

... K K/W 10ms 100ms 10µs Figure 24. Diode transient thermal 11 IKW40T120 0.5us 1us 1.5us t , TIME (V =15/0V, R =15Ω 150 Dynamic test circuit in Figure E) D=0.5 0.2 0 0.228 1.01*10 0.05 0.257 1.15*10 0.02 0.238 1.30*10 0.01 0.087 1.53*10 single pulse ...

Page 12

... F Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R Dynamic test circuit in Figure E) 12 IKW40T120 T =150° =25°C J 600A/µs 800A/µs 1000A/µs DIODE CURRENT SLOPE =600V, I =40A, ...

Page 13

... Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® TrenchStop Series I =80A 2,0V F 40A 1,5V 25A 10A 1,0V 0,5V 0,0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 13 IKW40T120 0°C 50°C 100°C , JUNCTION TEMPERATURE Rev. 2.1 May 06 ...

Page 14

... PG-TO247-3-21 Power Semiconductors ® TrenchStop Series 14 IKW40T120 Rev. 2.1 May 06 ...

Page 15

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 15 IKW40T120 =180nH =39pF. Rev. 2.1 May 06 ...

Page 16

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 16 IKW40T120 Rev. 2.1 May 06 ...

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