IKW25T120 Infineon Technologies, IKW25T120 Datasheet - Page 9

• Manufacturer Part Number: IKW25T120
• Description: IGBT 1200V 50A 190W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW25T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 190W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 190W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
14,0mJ
12,0mJ
10,0mJ
Figure 13. Typical switching energy losses
7mJ
6mJ
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
Figure 15. Typical switching energy losses
8,0mJ
6,0mJ
4,0mJ
2,0mJ
0,0mJ
E
E
10A
E
ts
off
on
*) E
*
*
due to diode recovery
*) E
50°C
on
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
due to diode recovery
J
E
E
E
I
CE
GE
and E
on
,
C
off
ts
on
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
and E
*
*
COLLECTOR CURRENT
20A
ts
include losses
ts
include losses
C
GE
100°C
=25A, R
=0/15V, R
30A
J
CE
=150°C,
=600V,
G
=22Ω,
G
40A
=22Ω,
150°C
TrenchStop Series
9
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
8 mJ
6 mJ
4 mJ
2 mJ
0 mJ
10mJ
®
9mJ
8mJ
7mJ
6mJ
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
400V
E
E
V
E
ts
on
off
CE
*) E
*) E
*
*
due to diode recovery
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
due to diode recovery
on
CE
COLLECTOR
GE
on
500V
and E
=600V, V
=0/15V, I
and E
R
G
,
ts
GATE RESISTOR
ts
include losses
include losses
600V
-
C
GE
EMITTER VOLTAGE
=25A, R
IKW25T120
=0/15V, I
J
J
=150°C,
=150°C,
700V
Rev. 2.1
G
=22Ω,
C
=25A,
800V
E
E
May 06
E
on
ts
off
*
*