IKW25T120 Infineon Technologies, IKW25T120 Datasheet - Page 11

• Manufacturer Part Number: IKW25T120
• Description: IGBT 1200V 50A 190W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW25T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 190W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 190W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
10
600V
400V
200V
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
0V
-1
-2
-3
K/W
K/W
K/W
0us
V
I
10µs
C
CE
0.05
D=0.5
0.2
0.1
(V
Dynamic test circuit in Figure E)
(D = t
0.5us
GE
100µs
0.01
single pulse
0.02
=0/15V, R
t
p
P
,
/ T)
PULSE WIDTH
t,
1ms
TIME
1us
R
0.229
0.192
0.174
0.055
R , ( K / W )
G
1
C
=22Ω, T
1
=
10ms
1
/R
1
1.5us
j
C
= 150 C,
1.10*10
1.56*10
1.35*10
1.52*10
2
=
100ms
, ( s )
2
/R
TrenchStop Series
R
2
-1
-2
-3
-4
2
60A
40A
20A
0A
11
Figure 22. Typical turn off behavior
Figure 24. Diode transient thermal
60A
40A
20A
0A
10
10
10
®
0us
-1
-2
V
0
I
K/W
K/W
K/W
C
CE
10µs
D=0.5
0.05
(V
Dynamic test circuit in Figure E)
impedance as a function of pulse
width
(D=t
0.2
0.1
0.5us
GE
P
=15/0V, R
100µs
0.02
0.01
single pulse
/T)
t
P
,
PULSE WIDTH
t,
1us
TIME
1ms
IKW25T120
G
=22Ω, T
R
0.282
0.317
0.294
0.107
R , ( K / W )
1
C
1
=
10ms
Rev. 2.1
1.5us
1
/R
j
1
= 150 C,
C
1.01*10
1.15*10
1.30*10
1.53*10
2
100ms
=
, ( s )
2
/R
May 06
R
2
600V
400V
200V
0V
-1
-2
-3
-4
2