IHW20N120R2 Infineon Technologies, IHW20N120R2 Datasheet - Page 8

• Manufacturer Part Number: IHW20N120R2
• Description: IGBT 1200V 40A 330W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW20N120R2

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.75V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 330W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1.2 KV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 20 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IHW20N120R2XK

Power Semiconductors
10
10
10
10V
Figure 17. Typical gate charge
5V
0V
Figure 19. IGBT transient thermal
resistance
(D = t
-1
-2
-3
K/W
K/W
K/W
0nC
p
D=0.5
/ T)
10µs
0.1
0.2
(I
single pulse
C
=20 A)
50nC
0.01
Q
100µs
t
GE
0.02
P
,
,
PULSE WIDTH
0.05
GATE CHARGE
100nC
240V
1ms
R
0.0578
0.1699
0.1392
0.087
R , ( K / W )
1
C
1
=
τ
1
10ms
/ R
1
150nC
C
1.16*10
1.88*10
2.03*10
2.38*10
2
=
τ
100ms
960V
τ
, ( s )
2
/ R
Soft Switching Series
R
2
-1
-2
-3
-4
2
8
Figure 18. Typical capacitance as a function
10
10
100pF
10pF
Figure 20. Diode transient thermal
impedance as a function of pulse width
(D=t
-1
-2
1nF
K/W
K/W
0V
P
/T)
V
D=0.5
0.2
0.1
CE
10µs
of collector-emitter voltage
(V
,
COLLECTOR
GE
single pulse
=0V, f = 1 MHz)
0.01
t
100µs
P
0.02
IHW20N120R2
,
PULSE WIDTH
10V
0.05
-
EMITTER VOLTAGE
1ms
R
0.0788
0.183
0.162
0.0505
R , ( K / W )
1
C
1
=
Rev. 1.4
τ
10ms
1
/ R
20V
1
C
1.04*10
1.52*10
9.51*10
4.95*10
100ms
2
=
τ
τ
, ( s )
2
/ R
Febr. 08
R
2
-1
-2
-4
-5
C
C
C
2
oss
iss
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