IHW20N120R2 Infineon Technologies, IHW20N120R2 Datasheet - Page 5

• Manufacturer Part Number: IHW20N120R2
• Description: IGBT 1200V 40A 330W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW20N120R2

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.75V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 330W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1.2 KV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 20 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IHW20N120R2XK

Power Semiconductors
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
50A
40A
30A
20A
10A
50A
40A
30A
20A
10A
0A
0A
0V
0V
V
CE
(T
V
(V
,
GE
COLLECTOR
2V
j
CE
V
= 25°C)
,
GE
=20V)
GATE-EMITTER VOLTAGE
=20V
T
11V
15V
13V
J
9V
7V
=175°C
1V
4V
25°C
-
EMITTER VOLTAGE
6V
2V
8V
10V
Soft Switching Series
5
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter saturation
50A
40A
30A
20A
10A
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0A
0V
V
CE
(T
voltage as a function of junction
temperature
(V
,
0°C
T
COLLECTOR
J
j
GE
,
= 175°C)
V
JUNCTION TEMPERATURE
=15V)
GE
1V
=20V
IHW20N120R2
11V
15V
13V
9V
7V
50°C
-
EMITTER VOLTAGE
2V
Rev. 1.4
100°C
3V
I
I
Febr. 08
C
C
150°C
=20A
=40A
I
C
=10A