SGW20N60 Infineon Technologies, SGW20N60 Datasheet - Page 4

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SGW20N60

Manufacturer Part Number
SGW20N60
Description
IGBT NPT 600V 40A 179W TO247-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGW20N60

Package / Case
TO-247-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
179W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
40 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-247
Vce (max)
600.0 V
Ic(max) @ 25°
40.0 A
Ic(max) @ 100°
20.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGW20N60XK

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110A
100A
200W
180W
160W
140W
120W
100W
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
90A
80A
70A
60A
50A
40A
30A
20A
10A
80W
60W
40W
20W
GE
0A
0W
j
j
10Hz
25°C
= 0/+15V, R
150 C, D = 0.5, V
150 C)
f,
T
100Hz
50°C
SWITCHING FREQUENCY
C
,
CASE TEMPERATURE
I
T
T
G
c
C
C
=110°C
=80°C
= 16 )
75°C
1kHz
CE
= 400V,
100°C
I
10kHz
c
125°C
100kHz
4
100A
Figure 4. Collector current as a function of
case temperature
(V
0.1A
10A
50A
40A
30A
20A
10A
1A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
C
CASE TEMPERATURE
10V
= 25 C, T
150 C)
75°C
-
EMITTER VOLTAGE
SGW20N60
SGP20N60
j
100V
100°C
150 C)
Rev. 2.2
125°C
1000V
t
15 s
200 s
50 s
1ms
p
DC
=4 s
Sep 07

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