SGW20N60 Infineon Technologies, SGW20N60 Datasheet

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SGW20N60

Manufacturer Part Number
SGW20N60
Description
IGBT NPT 600V 40A 179W TO247-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGW20N60

Package / Case
TO-247-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
179W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
40 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-247
Vce (max)
600.0 V
Ic(max) @ 25°
40.0 A
Ic(max) @ 100°
20.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGW20N60XK

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Manufacturer
Quantity
Price
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Fast IGBT in NPT-technology
Type
SGP20N60
SGW20N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
start at T
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
1
2
C
C
C
C
CE
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
= 20 A, V
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
j
= 25 C
CC
CC
j
off
= 50 V, R
compared to previous generation
150 C
600V, T
GE
600V
600V
j
V
p
= 25
CE
limited by T
2
150 C
1
for target applications
,
20A
20A
I
C
jmax
V
2.4V
2.4V
CE(sat)
http://www.infineon.com/igbt/
150 C
150 C
T
1
j
PG-TO-220-3-1
Marking
G20N60
G20N60
Symbol
V
I
I
-
V
E
t
P
T
T
C
C p u l s
S C
j
s
C E
G E
A S
t o t
, T
s t g
Package
PG-TO-220-3-1
PG-TO-247-3-21
-55...+150
SGW20N60
SGP20N60
Value
600
115
179
260
40
20
80
80
10
20
Rev. 2.2
PG-TO-247-3-21
G
V
A
V
mJ
W
Unit
C
s
Sep 07
C
E

Related parts for SGW20N60

SGW20N60 Summary of contents

Page 1

... Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO-220-3-1 for target applications http://www.infineon.com/igbt Marking C CE(sat) j 20A 2.4V G20N60 150 C 20A 2.4V G20N60 150 C Symbol jmax SGP20N60 SGW20N60 G PG-TO-247-3-21 Package PG-TO-220-3-1 PG-TO-247-3-21 Value 600 115 179 -55...+150 260 s Rev. 2 Unit ...

Page 2

... Allowed number of short circuits: <1000; time between short circuits: >1s. Symbol Conditions PG-TO-220-3 PG-TO-247-3-21 Symbol Conditions SGP20N60 SGW20N60 Max. Value Unit 0.7 K Value Unit min. Typ. max. 600 - - V 1.7 2 2.4 - 2.4 2 2500 - - 100 1100 1320 pF - 107 128 - 100 130 200 - A Rev. 2.2 Sep 07 ...

Page 3

... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SGP20N60 SGW20N60 Value Unit min. typ. max 225 270 - 0.44 0. 0.33 0.43 - 0.77 0.96 Value Unit min. typ. max 250 300 - 0.67 ...

Page 4

... V , COLLECTOR CE Figure 2. Safe operating area ( 50A 40A 30A 20A 10A 0A 125°C 25°C 50° Figure 4. Collector current as a function of case temperature (V 15V SGP20N60 SGW20N60 200 s 1ms DC 10V 100V 1000V - EMITTER VOLTAGE = 150 75°C 100°C 125°C , CASE TEMPERATURE 150 C) j Rev ...

Page 5

... Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50° JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP20N60 SGW20N60 EMITTER VOLTAGE I = 40A 20A C 0°C 50°C 100°C 150°C Rev. 2.2 Sep 07 ...

Page 6

... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C T Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.7mA SGP20N60 SGW20N60 t d(off d(on GATE RESISTOR G = 150 400V 20A, C max. typ. ...

Page 7

... K/W 0. 0.01 E off -3 10 K/W single pulse -4 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGP20N60 SGW20N60 and E include losses off GATE RESISTOR G = 150 400V 20A 0.1882 0.1137 -2 0.3214 2.24* ...

Page 8

... GE 350A 300A 250A 200A 150A 100A 50A 0A 14V 15V 10V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGP20N60 SGW20N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 12V 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...

Page 9

... PG-TO220-3-1 9 SGP20N60 SGW20N60 Rev. 2.2 Sep 07 ...

Page 10

... PG-TO247-3-21 10 SGP20N60 SGW20N60 Rev. 2.2 Sep 07 ...

Page 11

... Figure A. Definition of switching times Figure B. Definition of switching losses SGP20N60 SGW20N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =900pF. Rev. 2.2 Sep 07 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGP20N60 SGW20N60 12 Rev. 2.2 Sep 07 ...

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