SGB15N60 Infineon Technologies, SGB15N60 Datasheet - Page 6

• Manufacturer Part Number: SGB15N60
• Description: IGBT NPT 600V 31A 139W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB15N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 15A
• Current - Collector (ic) (max): 31A
• Power - Max: 139W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 31 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 31.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB15N60XT

100ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
10ns
10ns
C
GE
= 15A, R
5A
= 0/+15V, R
0°C
t
d(off)
t
d(on)
t
t
t
f
r
d(on)
T
10A
j
I
t
G
t
,
t
f
C
r
d(off)
JUNCTION TEMPERATURE
,
= 2 1 ,
COLLECTOR CURRENT
50°C
G
j
CE
= 150 C, V
= 21 ,
15A
= 400V, V
20A
100°C
CE
GE
= 400V,
= 0/+15V,
25A
150°C
30A
SGP15N60,
6
100ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
10ns
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
GE
C
= 0.4mA)
0
= 0/+15V, I
-50°C
T
j
,
t
JUNCTION TEMPERATURE
d(on)
R
C
20
G
,
= 15A,
j
0°C
GATE RESISTOR
= 150 C, V
SGW15N60
t
SGB15N60
r
50°C
40
CE
= 400V,
100°C
60
t
t
d(off)
f
150°C
max.
typ.
min.
Jul-02