SGB15N60 Infineon Technologies, SGB15N60 Datasheet - Page 4

• Manufacturer Part Number: SGB15N60
• Description: IGBT NPT 600V 31A 139W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB15N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 15A
• Current - Collector (ic) (max): 31A
• Power - Max: 139W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 31 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 31.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB15N60XT

80A
70A
60A
50A
40A
30A
20A
10A
140W
120W
100W
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
0A
80W
60W
40W
20W
GE
0W
j
j
10Hz
25°C
= 0/+15V, R
150 C, D = 0.5, V
150 C)
f,
100Hz
T
50°C
SWITCHING FREQUENCY
C
,
I
T
c
T
CASE TEMPERATURE
C
C
G
=80°C
=110°C
= 21 )
75°C
1kHz
CE
= 400V,
100°C
10kHz
I
c
125°C
100kHz
SGP15N60,
4
100A
Figure 4. Collector current as a function of
case temperature
(V
0.1A
10A
35A
30A
25A
20A
15A
10A
1A
5A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
C
CASE TEMPERATURE
10V
= 25 C, T
150 C)
75°C
-
EMITTER VOLTAGE
SGW15N60
SGB15N60
j
100V
100°C
150 C)
125°C
1000V
15 s
t
50 s
200 s
1ms
p
DC
=5 s
Jul-02