SKB10N60A Infineon Technologies, SKB10N60A Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
SKB10N60A
Manufacturer Part Number
SKB10N60A
Description
IGBT NPT 600V 20A 92W TO263-3
Manufacturer
Infineon Technologies
Datasheet
1.SKB10N60A.pdf
(13 pages)
Specifications of SKB10N60A
Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
92W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
21 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
21.0 A
Ic(max) @ 100°
10.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKB10N60AXT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SKB10N60A
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SKB10N60A
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
C C
G E
j
R
j
C C
G E
j
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 5 0 C
=1 5 0 C
F
1 )
1 )
1 )
1 )
= 2 00 V , I
= 2 00 V , I
= 25 ,
= 25
/ d t =2 0 0 A/ s
/ d t =2 0 0 A/ s
3
= 40 0 V, I
= 0/ 15 V ,
=1 8 0n H,
= 40 0 V, I
= 0/ 15 V ,
=1 8 0n H,
= 5 5p F
= 5 5p F
Conditions
Conditions
F
F
C
C
= 1 0 A,
= 1 0 A,
= 1 0 A,
= 1 0 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKB10N60A
Value
Value
0.320
0.260
0.280
0.540
0.15
0.17
typ.
typ.
178
220
200
310
180
198
350
314
690
200
4.5
6.3
28
12
24
20
28
12
26
36
Rev. 2.2
0.173
0.221
0.394
0.299
0.364
0.663
max.
max.
214
238
34
15
29
34
15
32
-
-
-
-
-
-
-
-
-
-
-
-
Oct. 07
Unit
ns
mJ
ns
nC
A
A/ s
Unit
ns
mJ
ns
nC
A
A/ s