SKB10N60A Infineon Technologies, SKB10N60A Datasheet
SKB10N60A
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SKB10N60A Summary of contents
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... Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 for target applications http://www.infineon.com/igbt Marking C CE(sat) j 2.3V K10N60 PG-TO-263-3-2 150 C jmax jmax 1 SKB10N60A G PG-TO-263-3-2 Package Symbol Value V 600 10 ...
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... C, unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SKB10N60A Max. Value 1.35 2.4 40 Value min. Typ. max. 600 - = 1.7 2 2.4 - 2.3 2.8 1.2 1.4 1.8 - 1.25 1. 1500 = 100 = 6.7 - 550 660 - 100 10 s Rev. 2.2 Unit K/W Unit - Oct. 07 ...
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... C j Symbol Conditions Energy losses include “tail” and diode E reverse recovery SKB10N60A Value Unit min. typ. max 178 214 - 0.15 0.173 mJ - 0.17 0.221 - 0.320 0.394 - 220 - 200 - - 310 - 180 - A/ s Value Unit min. typ. max 198 238 - ...
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... CASE TEMPERATURE C Figure 3. Power dissipation as a function of case temperature (T 150 10kH z 100kH z V Figure 2. Safe operating area ( ° ° C Figure 4. Collector current as a function of case temperature (V 15V SKB10N60A COLLECTOR EMITTER VOLTAGE 150 ° ° ° ° CASE TEMPERATURE C 150 C) j Rev. 2 ...
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... GATE EMITTER VOLTAGE GE Figure 7. Typical transfer characteristics (V = 10V COLLECTOR CE Figure 6. Typical output characteristics (T = 150 °C 8V 10V T , JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKB10N60A EMITTER VOLTAGE ° ° °C Rev. 2.2 Oct. 07 ...
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... GE Dynamic test circuit in Figure E) 5 ,5V 5 ,0V 4 ,5V 4 ,0V 3 ,5V 3 ,0V 2 ,5V 2 ,0V 1 ,5V 1 ,0V 150°C -50 °C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.3mA SKB10N60A GATE RESISTOR G = 150 400V 10A °C 5 0°C 100 °C 150 ° JUNCTION TEMPERATURE j Rev ...
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... Dynamic test circuit in Figure K/W D=0 K/W 0.02 0. K/W single pulse -3 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SKB10N60A *) E and E include losses on ts due to diode recovery GATE RESISTOR G = 150 400V 10A, C 0.2 0 0.4287 0.0358 ...
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... 1nF 100pF 10pF Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SKB10N60A C iss rss 10V 20V 30V , - COLLECTOR EMITTER VOLTAGE GATE EMITTER VOLTAGE GE = 150 C) j Rev. 2 Oct. 07 ...
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... T R Dynamic test circuit in Figure E) 100 Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 200V Dynamic test circuit in Figure E) 9 SKB10N60A DIODE CURRENT SLOPE = 125 C, j 300A / s 500 00A / s /dt, DIODE CURRENT SLOPE = 125 C, j Rev ...
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... Figure 27. Diode transient thermal impedance as a function of pulse width ( 2.0V 1.5V 1.0V -40°C 1.5V 2.0V Figure 26. Typical diode forward voltage as a function of junction temperature , ( 5.53*10 -3 4.28*10 -4 4.83*10 -5 5.77* SKB10N60A I = 20A 10A F 0°C 40°C 80°C 120° JUNCTION TEMPERATURE j Rev. 2.2 Oct. 07 ...
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... PG-TO-263-3-2 11 SKB10N60A Rev. 2.2 Oct. 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses SKB10N60A i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =55pF. Rev. 2.2 Oct. 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKB10N60A 13 Rev. 2.2 Oct. 07 ...