SKB02N60 Infineon Technologies, SKB02N60 Datasheet - Page 7

• Manufacturer Part Number: SKB02N60
• Description: IGBT NPT 600V 6A 30W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB02N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 6.0 A
• Ic(max) @ 100°: 2.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SKB02N60XT

0.2mJ
0.1mJ
0.0mJ
0.2mJ
0.1mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
GE
= 2A, R
0A
= 0/+15V, R
0°C
*) E
due to diode recovery.
*) E
due to diode recovery.
T
G
j
I
,
on
on
C
= 1 1 8 ,
1A
JUNCTION TEMPERATURE
,
and E
and E
COLLECTOR CURRENT
50°C
G
j
CE
ts
ts
= 11 8 ,
= 150 C, V
include losses
include losses
2A
= 400V, V
100°C
3A
CE
GE
= 400V,
= 0/+15V,
4A
150°C
E
E
E
E
E
E
on
ts
off
on
ts
off
*
*
*
*
5A
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
0.2mJ
0.1mJ
0.0mJ
10
10
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
10
GE
-1
-2
0
0
K/W
K/W
K/W
= 0/+15V, I
p
1µs
/ T)
0.01
0.05
0.02
0.2
0.1
D=0.5
*) E
due to diode recovery.
E
E
E
single pulse
ts
on
off
on
10µs 100µs
100
*
*
and E
R
C
G
t
p
,
= 2A,
,
j
GATE RESISTOR
ts
= 150 C, V
PULSE WIDTH
include losses
200
R
1.026
1.3
1.69
0.183
SKB02N60
R , ( K / W )
1m s
1
C
1
=
CE
1
Rev. 2.2
/ R
10m s 100m s
300
= 400V,
1
C
0.035
3.62*10
4.02*10
4.21*10
2
=
, ( s )
2
/R
R
2
400
-3
-4
-5
Oct. 07
2
1s