SKB02N60 Infineon Technologies, SKB02N60 Datasheet - Page 3

• Manufacturer Part Number: SKB02N60
• Description: IGBT NPT 600V 6A 30W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB02N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 6.0 A
• Ic(max) @ 100°: 2.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SKB02N60XT

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
C
j
C C
G E
j
R
j
C C
G E
j
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 5 0 C
= 2 A,
=1 5 0 C
F
1 )
1 )
1 )
1 )
= 2 00 V , I
= 2 00 V , I
= 11 8 ,
= 11 8 ,
/ d t =2 0 0 A/ s
/ d t =2 0 0 A/ s
3
= 40 0 V, I
= 0/ 15 V ,
= 40 0 V,
= 0/ 15 V ,
Conditions
Conditions
= 18 0 nH ,
= 18 0 pF
= 18 0 nH ,
= 18 0 pF
F
F
C
= 2. 9 A ,
= 2. 9 A ,
= 2 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKB02N60
Value
Value
0.036
0.028
0.064
0.054
0.043
0.097
typ.
typ.
259
130
118
180
287
150
131
150
200
1.9
3.8
20
13
52
12
65
20
14
67
19
Rev. 2.2
0.041
0.036
0.078
0.062
0.056
0.118
max.
max.
311
344
24
16
62
24
17
80
-
-
-
-
-
-
-
-
-
-
-
-
Oct. 07
Unit
ns
mJ
ns
nC
A
A/ s
Unit
ns
mJ
ns
nC
A
A/ s