SGD02N60 Infineon Technologies, SGD02N60 Datasheet - Page 6

• Manufacturer Part Number: SGD02N60
• Description: IGBT NPT 600V 6.0A 30W TO252-3
• Manufacturer: Infineon Technologies

Specifications of SGD02N60

• Package / Case: DPak, TO-252 (5 leads + tab)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: DPAK (TO-252)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 6.0 A
• Ic(max) @ 100°: 2.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGD02N60XT

100ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
10ns
10ns
C
GE
= 2A, R
0A
= 0/+15V, R
0°C
t
r
T
t
G
t
t
d(on)
f
j
I
d(off)
,
1A
C
= 1 1 8 ,
JUNCTION TEMPERATURE
,
COLLECTOR CURRENT
50°C
G
j
CE
= 150 C, V
= 11 8 ,
2A
= 400V, V
100°C
3A
CE
GE
= 400V,
= 0/+15V,
4A
t
d(on)
t
150°C
r
t
t
f
d(off)
5A
6
100ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
10ns
C
GE
= 0.15mA)
0
= 0/+15V, I
-50°C
T
j
,
100
JUNCTION TEMPERATURE
R
G
C
,
0°C
= 2A,
j
GATE RESISTOR
= 150 C, V
200
SGD02N60
50°C
SGP02N60
CE
Rev. 2.3
300
= 400V,
100°C
150°C
t
t
t
max.
r
d(on)
d(off)
min.
t
400
typ.
f
Sep 07