SGD02N60 Infineon Technologies, SGD02N60 Datasheet - Page 4

• Manufacturer Part Number: SGD02N60
• Description: IGBT NPT 600V 6.0A 30W TO252-3
• Manufacturer: Infineon Technologies

Specifications of SGD02N60

• Package / Case: DPak, TO-252 (5 leads + tab)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2A
• Current - Collector (ic) (max): 6A
• Power - Max: 30W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: DPAK (TO-252)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 6.0 A
• Ic(max) @ 100°: 2.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGD02N60XT

16A
14A
12A
10A
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation (IGBT) as a
function of case temperature
(T
8A
6A
4A
2A
0A
35W
30W
25W
20W
15W
10W
GE
j
j
10Hz
5W
0W
= 0/+15V, R
25°C
150 C, D = 0.5, V
150 C)
f,
100Hz
T
SWITCHING FREQUENCY
50°C
C
I
,
c
CASE TEMPERATURE
T
G
C
=110°C
= 118 )
T
75°C
1kHz
C
CE
=80°C
= 400V,
100°C
10kHz
I
c
125°C
100kHz
4
0.01A
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
1A
7A
6A
5A
4A
3A
2A
1A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
C
CASE TEMPERATURE
10V
= 25 C, T
150 C)
75°C
-
EMITTER VOLTAGE
SGD02N60
SGP02N60
j
100V
100°C
150 C)
Rev. 2.3
125°C
1000V
DC
1ms
50 s
200 s
t
15 s
p
=2 s
Sep 07