GT60N321(Q) Toshiba, GT60N321(Q) Datasheet - Page 4

• Manufacturer Part Number: GT60N321(Q)
• Description: IGBT 1000V 60A TO-3P LH
• Manufacturer: Toshiba

Specifications of GT60N321(Q)

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 170W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1000 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
100
0.1
20
16
12
10
10
8
4
0
1
1
0
0
1
* Single
non-repetitive
pulse Tc = 25°C
Curves must be
derated linearly
with increase in
temperature.
(Continuous)
Operation
I C max (Pulsed)*
Common emitter
V CC = 600 V
R G = 51
V GG =
T C = 25°C
I C max
DC
50
Collector- emitter voltage V CE (V)
V CE = 150 V
±
Ω
15 V
100
20
Collector current I C (A)
Gate charge Q G
10
Safe Operating Area
Switching Time – I
V
150
CE
100 V
50 V
1 ms*
, V
200
40
GE
10 ms*
100
– Q
250
100 μs*
G
(nC)
t off
t on
C
t r
300
Common
emitter
R L = 2.5 Ω
T C = 25°C
60
10 μs*
t f
1000
350
3000
400
80
4
10000
1000
100
300
100
0.1
50
30
10
10
10
5
3
1
1
1
1
1
Common emitter
V CC = 600 V
I C = 60 A
V GG =
T C = 25°C
±
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
30
15 V
10
Gate resistance R G (
Switching time – R
Reverse Bias SOA
10
100
C – V
100
C ies
CE
300
100
C oes
C res
G
Ω
1000
Common emitter
V GE = 0 V
f = 1 MHz
T C = 25°C
T j < = 125°C
V GE = ±15 V
R G = 10 Ω
)
1000
t off
t on
t r
t f
GT60N321
2006-11-01
10000
1000
3000