GT60N321(Q) Toshiba, GT60N321(Q) Datasheet

GT60N321(Q)

Manufacturer Part Number

GT60N321(Q)

Description

IGBT 1000V 60A TO-3P LH

Manufacturer

Toshiba

Datasheet

1.GT60N321Q.pdf (6 pages)

Specifications of GT60N321(Q)

Voltage - Collector Emitter Breakdown (max)

1000V

Vce(on) (max) @ Vge, Ic

2.8V @ 15V, 60A

Current - Collector (ic) (max)

60A

Power - Max

170W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

Configuration

Single

Collector- Emitter Voltage Vceo Max

1000 V

Maximum Gate Emitter Voltage

+/- 25 V

Maximum Operating Temperature

+ 150 C

Continuous Collector Current Ic Max

60 A

Minimum Operating Temperature

- 55 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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High Power Switching Applications

Fourth Generation IGBT

•

Absolute Maximum Ratings

Equivalent Circuit

FRD included between emitter and collector

Enhancement mode type

High speed IGBT : t

Low saturation voltage: V

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Emitter-Collector

Forward Current

Collector Power Dissipation

(Tc = 25°C)

Junction Temperature

Storage Temperature

Screw Torque

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Gate

Characteristics

FRD : t

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Collector

Emitter

= 0.25 μs (typ.) (I

= 0.8 μs (typ.) (di/dt = −20 A/μs)

1 ms

CE (sat)

= 2.3 V (typ.) (I

(Ta = 25°C)

symbol

GT60N321

ECFP

ECF

GES

CES

⎯

stg

= 60 A)

−55~150

= 60 A)

Rating

1000

120

170

150

±25

0.8

Marking

GT60N321

TOSHIBA

JAPAN

N･m

Unit

°C

Weight: 9.75 g (typ.)

JEDEC

JEITA

TOSHIBA

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2-21F2C

GT60N321

2006-11-01

―

Unit: mm

Related parts for GT60N321(Q)

GT60N321(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Electrical Characteristics Characteristic Gate Leakage Current Collector Cut-off Current Gate-Emitter Cut-off Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Input Capacitance Rise Time Turn-on Time Fall Time Switching Time Turn-off Time Emitter-Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance ...

Page 3

I – 100 Common 25 V emitter 25° Collector-emitter voltage V CE (V) V ...

Page 4

– Common emitter 2.5 Ω 25° 150 100 100 150 200 250 ...

Page 5

R – ( 25° Diode Stage 0 10 IGBT Stage − − − 3 − 5 − 4 − 3 − 2 − 1 ...

Page 6

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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