GT60N321(Q) Toshiba, GT60N321(Q) Datasheet
GT60N321(Q)
Specifications of GT60N321(Q)
Related parts for GT60N321(Q)
GT60N321(Q) Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Electrical Characteristics Characteristic Gate Leakage Current Collector Cut-off Current Gate-Emitter Cut-off Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Input Capacitance Rise Time Turn-on Time Fall Time Switching Time Turn-off Time Emitter-Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance ...
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I – 100 Common 25 V emitter 25° Collector-emitter voltage V CE (V) V ...
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– Common emitter 2.5 Ω 25° 150 100 100 150 200 250 ...
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R – ( 25° Diode Stage 0 10 IGBT Stage − − − 3 − 5 − 4 − 3 − 2 − 1 ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...