GT60N321(Q) Toshiba, GT60N321(Q) Datasheet - Page 3

• Manufacturer Part Number: GT60N321(Q)
• Description: IGBT 1000V 60A TO-3P LH
• Manufacturer: Toshiba

Specifications of GT60N321(Q)

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 170W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1000 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

100
100
80
60
40
20
10
80
60
40
20
0
8
6
4
2
0
0
0
0
0
Common
Emitter
V CE = 5 V
30
Collector-emitter voltage V CE (V)
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
1
5
T C = 125°C
2
25 V
20 V
80
I C = 10 A
60
V
10
2
I
I
CE
C
C
25
– V
– V
– V
4
V GE = 7 V
CE
GE
GE
15
10 V
15 V
3
40
Common
emitter
Tc = 25°C
Common
emitter
Tc = 25°C
6
20
4
25
5
8
3
10
10
−40
8
6
4
2
0
8
6
4
2
0
4
3
2
1
0
0
0
Common
emitter
V GE = 15 V
30
30
Gate-emitter voltage V GE (V)
Gate-emitter voltage V GE (V)
5
5
0
Case temperature Tc (°C)
80
80
I C = 10 A
I C = 10 A
60
60
V
V
10
V
10
40
CE (sat)
CE
CE
– V
– V
GE
– Tc
GE
15
15
80
Common
emitter
Tc = −40°C
Common
emitter
Tc = 125°C
120
20
20
I C = 10 A
GT60N321
2006-11-01
80
60
30
160
25
25