IRG7PH42UD1PBF International Rectifier, IRG7PH42UD1PBF Datasheet - Page 5

• Manufacturer Part Number: IRG7PH42UD1PBF
• Description: IGBT N-CH 1200V 85A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH42UD1PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 85A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 85A
• Collector Emitter Voltage Vces: 1.7V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Package: TO-247
• Circuit: Co-Pack
• Switching: Soft
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 85
• Ic @ 100c (a): 45
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 3.29
• Ets Max (mj): 3.8
• Vf Typ: 1.15
• Pd @25c (w): 313
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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T
J
T
= 150°C; L = 200μH; V
J
= 150°C; L = 200μH; V
10000
1000
5000
4000
3000
2000
1000
6500
5500
4500
3500
2500
1500
100
10
0
Fig. 17 - Typ. Capacitance vs. V
Fig. 15 - Typ. Energy Loss vs. R
0
0
0
Fig. 13 - Typ. Energy Loss vs. I
10
V
25
20
GE
= 0V; f = 1MHz
20
CE
CE
50
40
= 600V, I
= 600V, R
V CE (V)
30
R G (Ω)
E OFF
I C (A)
40
75
60
E OFF
Cies
CE
Cres
Coes
G
= 10Ω; V
50
= 30A; V
100
IRG7PH42UD1PbF/IRG7PH42UD1-EP
80
C
CE
G
60
GE
125
100
GE
= 15V
70
= 15V
T
J
T
= 150°C; L = 200μH; V
J
= 150°C; L = 200μH; V
10000
1000
1000
100
100
10
Fig. 16 - Typ. Switching Time vs. R
16
14
12
10
8
6
4
2
0
Fig. 14 - Typ. Switching Time vs. I
Fig. 18 - Typical Gate Charge vs. V
0
0
0
10
20
td OFF
t F
Q G , Total Gate Charge (nC)
I
CE
50
20
V CES =600V
V CES = 400V
40
= 30A; L = 680μH
CE
CE
= 600V, R
= 600V, I
30
R G (Ω)
I C (A)
100
60
td OFF
t F
40
80
CE
G
50
= 10Ω; V
150
= 30A; V
100
C
60
G
GE
GE
120
200
GE
70
= 15V
= 15V
5